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| KSA1625 KSA1625 High Voltage Switch * High Breakdown Voltage * High Speed Switching 1 TO-92 1. Emitter 2. Collector 3. Base PNP Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IB IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation (Ta=25C) Collector Power Dissipation (TC=25C) Junction Temperature Storage Temperature Ratings -400 -400 -7 -0.25 -0.5 -1.0 0.75 2 150 -55 ~ 150 Units V V V A A A W W C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Dc Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time Test Condition IC= -1mA, IB=0 VCB= -400V, IE=0 VEB= -5V, IC=0 VCE= -5V, IC= -50mA IC= -100mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -10V, IC= -10mA VCB= -10V, f=1MHz IC= -100mA, RL=1.5k IB1=- IB2= -10mA VCC= -150V 10 25 1 5 1 40 Min. -400 Max. -1 -1 200 -1 -1.2 V V MHz pF s s s Units V A A hFE Classification Classification hFE M 40 ~ 80 L 60 ~ 120 K 100 ~ 200 (c)2002 Fairchild Semiconductor Corporation Rev. A2, June 2002 KSA1625 Typical Characteristics -0.5 1000 VCE= - 5V IC[A], COLLECTOR CURRENT -0.4 A I B=-200m I B=-180mA hFE, DC CURRENT GAIN IB=-160mA -0.3 IB=-140mA IB=-120mA IB=-100mA 100 -0.2 IB=-80mA IB=-60mA IB=-40mA IB=-20mA 10 -0.1 -0 -2 -4 -6 -8 -10 1 -0.1 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 IC= - 10 IB 1000 f=1.0MHz -1 Cob[pF], CAPACITANCE -10 -100 -1000 VBE(sat) 100 -0.1 V CE(sat) 10 -0.01 -0.1 -1 1 -0.1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 -10 VCE = -10V Ta=25 C Single Pulse ICMAX(Pulse) 1m s 10 0 s 10 s o IC[A], COLLECTOR CURRENT -1 100 DC -0.1 10 VCEO(sus)MAX -0.01 1 -1 -10 -100 -1000 -0.001 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area (c)2002 Fairchild Semiconductor Corporation Rev. A2, June 2002 KSA1625 Package Demensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, June 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet seriesTM FAST(R) DISCLAIMER FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. H7 |
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